and tunneling physics in III–V vertical nanowire tunnel field-effect transistors (TFETs) to address power density limits. Nanopore Fabrication : Beyond transistors, Zhao has contributed to novel SpacerX processes
and tunneling physics in III–V vertical nanowire tunnel field-effect transistors (TFETs) to address power density limits. Nanopore Fabrication : Beyond transistors, Zhao has contributed to novel SpacerX processes