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and tunneling physics in III–V vertical nanowire tunnel field-effect transistors (TFETs) to address power density limits. Nanopore Fabrication : Beyond transistors, Zhao has contributed to novel SpacerX processes

Xin Xin Zhao Schematic Top Jun 2026

and tunneling physics in III–V vertical nanowire tunnel field-effect transistors (TFETs) to address power density limits. Nanopore Fabrication : Beyond transistors, Zhao has contributed to novel SpacerX processes